Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating

ABSTRACT

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.

This application claims the benefit of U.S. Provisional Application No.61/091,071, filed Aug. 22, 2008, which application is herebyincorporated herein, in its entirety, by reference thereto.

FIELD OF THE INVENTION

The present invention relates to semiconductor memory technology. Morespecifically, the present invention relates to semiconductor memoryhaving both volatile and non-volatile functionality.

BACKGROUND OF THE INVENTION

Semiconductor memory devices are used extensively to store data. Memorydevices can be characterized according to two general types: volatileand non-volatile. Volatile memory devices such as static random accessmemory (SRAM) and dynamic random access memory (DRAM) lose data that isstored therein when power is not continuously supplied thereto.

Non-volatile memory devices, such as flash erasable programmable readonly memory (Flash EPROM) devices retain stored data even in the absenceof power supplied thereto. Unfortunately, non-volatile memory devicestypically operate more slowly than volatile memory devices. Accordingly,it would be desirable to provide a universal type memory device thatincludes the advantages of both volatile and non-volatile memorydevices, i.e., fast operation on par with volatile memories, whilehaving the ability to retain stored data when power is discontinued tothe memory device. It would further be desirable to provide such auniversal type memory device having a size that is not prohibitivelylarger than comparable volatile or non-volatile devices.

SUMMARY OF THE INVENTION

A semiconductor memory cell is provided, including: a capacitorlesstransistor having a floating body configured to store data as chargetherein when power is applied to the cell; and a nonvolatile memorycomprising a resistance change element configured to store data storedin the floating body under any one of a plurality of predeterminedconditions.

In at least one embodiment, the resistance change element comprises aphase change material.

In at least one embodiment, the resistance change element comprises ametal-insulator-metal system.

In at least one embodiment, one of the conditions comprises aninstruction to back up the data stored in the floating body.

In at least one embodiment, one of the predetermined conditionscomprises loss of power to the cell, wherein the cell is configured toperform a shadowing process wherein the data in the floating body isloaded into and stored in the nonvolatile memory.

In at least one embodiment, the loss of power to the cell is one ofunintentional power loss or intentional power loss, wherein intentionalpower loss is predetermined to conserve power.

In at least one embodiment, upon restoration of power to the cell, thedata in the nonvolatile memory is loaded into the floating body andstored therein.

In at least one embodiment, the cell is configured to reset thenonvolatile memory to an initial state after loading the data into thefloating body upon the restoration of power.

In at least one embodiment, the resistance change element is configuredto be set to a high resistance state in a first state and is configuredto be set to a low resistance state in a second state, and wherein thereset to the initial state comprises resetting the resistance changeelement to the high resistance state.

In at least one embodiment, the resistance change element is configuredto be set to a high resistance state in a first state and is configuredto be set to a low resistance state in a second state, and wherein thereset to the initial state comprises resetting the resistance changeelement to the low resistance state.

In at least one embodiment, a semiconductor memory array is providedthat includes a plurality of the semiconductor memory cells arranged ina matrix of rows and columns.

A method of operating semiconductor memory to function as volatilememory, while having the ability to retain stored data when power isdiscontinued to the semiconductor memory is provided, including: storingdata in a capacitorless transistor having a floating body configured tostore data as charge therein when power is applied to the memory; andstoring data in a resistance change element by configuring theresistance change element in one of a plurality of resistivity states,wherein each of the resistivity states corresponds to a different datavalue, respectively.

In at least one embodiment, the resistance change element isconfigurable to a high resistivity state and a low resistivity state,respectively.

In at least one embodiment, the resistance change element storesmulti-bit data and is configurable to a high resistivity state, anintermediate-high resistivity state having a resistivity less than thehigh resistivity state, an intermediate-low resistivity state havingless resistivity than the intermediate-high resistivity state, and a lowresistivity state having less resistivity than the intermediate-lowresistivity state, respectively.

In at least one embodiment, the capacitorless transistor and theresistance change element are included in a memory cell, the cellcomprising a substrate being made of a material having a firstconductivity type selected from p-type conductivity type and n-typeconductivity type; a first region having a second conductivity typeselected from the p-type and n-type conductivity types, the secondconductivity type being different from the first conductivity type; asecond region having the second conductivity type, the second regionbeing spaced apart from the first region; a buried layer in thesubstrate below the first and second regions, spaced apart from thefirst and second regions and having the second conductivity type; a bodyregion formed between the first and second regions and the buried layer,the body region having the first conductivity type and storing the datawhen power is applied to the cell; and a gate positioned between thefirst and second regions and adjacent the body region; wherein theresistive change element is connected to one of the first and secondregions; wherein the capacitorless transistor of the memory cell isconfigured to store a first data state which corresponds to a firstcharge in the body region as the in a first configuration, and a seconddata state which corresponds to a second charge in the body region in asecond configuration.

In at least one embodiment, the cell includes a substrate terminalconnected to the substrate beneath the buried layer; the resistivechange element connected to one of the first and second regions; asource line terminal electrically connected to one of the first regionand second regions; a bit line terminal electrically connected to theother of the first and second regions, wherein one of the source lineand the bit line is connected to the one of the first and second regionsby connection to the resistive change element; a word line terminalconnected to the gate; and a buried well terminal electrically connectedto the buried layer.

In at least one embodiment, the source line terminal is connected to theresistance change element which is in turn connected to the secondregion, the method further comprising shadowing data stored in thefloating body to the resistance change element, wherein the shadowing isperformed by: applying a positive voltage to the source line terminal;applying a substantially neutral voltage to the bit line terminal;applying a neutral voltage or slightly positive voltage to the word lineterminal; applying a low positive voltage to the buried well terminal;and applying a substantially neutral voltage to the substrate terminal.

In at least one embodiment, the source line terminal is connected to theresistance change element which is in turn connected to the secondregion, the method further comprising shadowing data stored in thefloating body to the resistance change element, wherein the shadowing isperformed by: applying a neutral voltage to the source line terminal;applying a neutral voltage or slightly positive voltage to the word lineterminal; applying a positive voltage to the substrate terminal; andallowing the bit line terminal and buried well terminal to float.

In at least one embodiment, the shadowing process is performednon-algorithmically.

In at least one embodiment, when the floating body stores a positivepotential, resulting electric current flowing through the resistancechange element changes the resistance change material from a lowresistivity state to a high resistivity state, and the resistance changematerial remains in the high resistivity state when voltages to theterminals are discontinued; and when the floating body stores a neutralor negative potential, the capacitorless transistor is turned off andelectric current does not flow through the resistance change element,whereby the resistance change element remains in the low resistivitystate, and the resistance change material remains in the low resistivitystate when voltages to the terminals are discontinued.

In at least one embodiment, the source line terminal is connected to theresistance change element which is in turn connected to the secondregion, the method further comprising, after discontinuance of power thecell and upon restoring power to the cell, restoring data stored on theresistance change element to the floating body, wherein the restoringdata is performed by: applying a negative voltage to the source lineterminal; applying a positive voltage to the bit line terminal; applyinga negative voltage to the word line terminal; applying a low positivevoltage to the buried well terminal; and applying a substantiallyneutral voltage to the substrate terminal.

In at least one embodiment, the restoring data process is performednon-algorithmically.

In at least one embodiment, when the resistance change element is in ahigh resistivity state, holes are injected into the floating bodycausing the floating body to store a positive potential; and when theresistance change element is in a low resistivity state, holes areevacuated from the floating body causing the floating body to store aneutral potential.

In at least one embodiment, the method further includes, after restoringdata stored in the floating body, resetting the resistance changeelement, wherein the resetting comprises resetting the resistance changeelement to a predetermined resistivity state.

In at least one embodiment, the resetting comprises: applying a positivevoltage to the source line terminal; applying a substantially neutralvoltage to the bit line terminal; applying a neutral voltage or slightlypositive voltage to the word line terminal; applying a positive voltageto the buried well terminal; and applying a substantially neutralvoltage to the substrate terminal.

In at least one embodiment, the resetting comprises: applying a neutralvoltage to the source line terminal; applying a neutral voltage orslightly positive voltage to the word line terminal; applying a positivevoltage to the substrate terminal; and allowing the bit line terminaland buried well terminal to float.

In at least one embodiment, the capacitorless transistor and theresistance change element are included in a memory cell, the cellcomprising a silicon-on-insulator substrate, a substrate of the beingmade of a material having a first conductivity type selected from p-typeconductivity type and n-type conductivity type; a first region having asecond conductivity type selected from the p-type and n-typeconductivity types, the second conductivity type being different fromthe first conductivity type; a second region having the secondconductivity type, the second region being spaced apart from the firstregion; a buried insulator layer in the substrate below the first andsecond regions, spaced apart from the first and second regions andinsulating a body region from the substrate, the body region formedbetween the first and second regions and the buried insulator layer, thebody region having the first conductivity type and storing the data whenpower is applied to the cell; and a gate positioned between the firstand second regions and adjacent the body region; wherein the resistivechange element is connected to one of the first and second regions;wherein the capacitorless transistor of the memory cell is configured tostore a first data state which corresponds to a first charge in the bodyregion as the in a first configuration, and a second data state whichcorresponds to a second charge in the body region in a secondconfiguration.

In at least one embodiment, the cell includes a substrate terminalconnected to the substrate beneath the buried insulator layer; theresistive change element connected to one of the first and secondregions; a source line terminal electrically connected to one of thefirst region and second regions; a bit line terminal electricallyconnected to the other of the first and second regions, wherein one ofthe source line and the bit line is connected to the one of the firstand second regions by connection to the resistive change element; and aword line terminal connected to the gate.

In at least one embodiment, the source line terminal is connected to theresistance change element which is in turn connected to the secondregion, the method further comprising shadowing data stored in thefloating body to the resistance change element, wherein the shadowing isperformed by: applying a positive voltage to the source line terminal;applying a substantially neutral voltage to the bit line terminal;applying a neutral voltage or slightly positive voltage to the word lineterminal; and applying a neutral or negative voltage to the substrateterminal.

In at least one embodiment, the shadowing process is performednon-algorithmically.

In at least one embodiment, when the floating body stores a positivepotential, resulting electric current flowing through the resistancechange element changes the resistance change material from a lowresistivity state to a high resistivity state, and the resistance changematerial remains in the high resistivity state when voltages to theterminals are discontinued; and when the floating body stores a neutralor negative potential, the capacitorless transistor is turned off andelectric current does not flow through the resistance change element,whereby the resistance change element remains in the low resistivitystate, and the resistance change material remains in the low resistivitystate when voltages to the terminals are discontinued.

In at least one embodiment, the source line terminal is connected to theresistance change element which is in turn connected to the secondregion, the method further comprising, after discontinuance of power tothe cell and upon restoring power to the cell, restoring data stored onthe resistance change element to the floating body, wherein therestoring data is performed by: applying a negative voltage to thesource line terminal; applying a positive voltage to the bit lineterminal; applying a negative voltage to the word line terminal; andapplying a neutral or negative voltage to the substrate terminal.

In at least one embodiment, when the resistance change element is in ahigh resistivity state, holes are injected into the floating bodycausing the floating body to store a positive potential; and when theresistance change element is in a low resistivity state, holes areevacuated from the floating body causing the floating body to store aneutral potential.

In at least one embodiment, after restoring data stored in the floatingbody, the resistance change element is reset, wherein the resettingcomprises resetting the resistance change element to a predeterminedresistivity state.

In at least one embodiment, the resetting comprises: applying a positivevoltage to the source line terminal; applying a substantially neutralvoltage to the bit line terminal; applying a neutral voltage or positivevoltage to the word line terminal; and applying a neutral or negativevoltage to the substrate terminal

These and other features of the invention will become apparent to thosepersons skilled in the art upon reading the details of the memory cells,devices, arrays and methods as more fully described below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flowchart illustrating operation of a memory deviceaccording to an embodiment of the present invention.

FIG. 2 is a cross-sectional, schematic illustration of a memory cellaccording to an embodiment of the present invention.

FIG. 3 is a schematic, cross-sectional illustration of a memory cellaccording to an embodiment of the present invention.

FIG. 4 is a schematic illustrating an operating condition for a writestate “1” operation that can be carried out on a memory cell accordingto an embodiment of the present invention.

FIG. 5 illustrates an operating condition for a write state “0”operation that can be carried out on a memory cell according to anembodiment of the present invention.

FIGS. 6A-6B schematically illustrate shadowing operations that can becarried out on a memory cell according to an embodiment of the presentinvention.

FIGS. 7A-7B schematically illustrate restore operations that can becarried out on a memory cell according to an embodiment of the presentinvention.

FIG. 8 schematically illustrates a reset operation that can be carriedout on a memory cell according to an embodiment of the presentinvention.

FIG. 9A is a perspective, cross-sectional, schematic illustration of afin-type memory cell device according to an embodiment of the presentinvention.

FIG. 9B is a top view schematic illustration of a fin-type memory celldevice according to an embodiment of the present invention.

FIG. 10 is a cross-sectional, schematic illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 11 is a cross-sectional, schematic illustration of a fin-typememory cell device according to another embodiment of the presentinvention.

FIG. 12 illustrates various states of a multi-level cell according to anembodiment of the present invention.

FIG. 13A is a schematic diagram showing an example of array architectureof a plurality of memory cells according to an embodiment of the presentinvention.

FIG. 13B is a schematic diagram showing an example of array architectureof a plurality of memory cells according to another embodiment of thepresent invention.

FIG. 14 is a flowchart illustrating operation of a memory deviceaccording to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Before the present devices and methods are described, it is to beunderstood that this invention is not limited to particular embodimentsdescribed, as such may, of course, vary. It is also to be understoodthat the terminology used herein is for the purpose of describingparticular embodiments only, and is not intended to be limiting, sincethe scope of the present invention will be limited only by the appendedclaims.

Where a range of values is provided, it is understood that eachintervening value, to the tenth of the unit of the lower limit unlessthe context clearly dictates otherwise, between the upper and lowerlimits of that range is also specifically disclosed. Each smaller rangebetween any stated value or intervening value in a stated range and anyother stated or intervening value in that stated range is encompassedwithin the invention. The upper and lower limits of these smaller rangesmay independently be included or excluded in the range, and each rangewhere either, neither or both limits are included in the smaller rangesis also encompassed within the invention, subject to any specificallyexcluded limit in the stated range. Where the stated range includes oneor both of the limits, ranges excluding either or both of those includedlimits are also included in the invention.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. Although any methods andmaterials similar or equivalent to those described herein can be used inthe practice or testing of the present invention, the preferred methodsand materials are now described. All publications mentioned herein areincorporated herein by reference to disclose and describe the methodsand/or materials in connection with which the publications are cited.

It must be noted that as used herein and in the appended claims, thesingular forms “a”, “an”, and “the” include plural referents unless thecontext clearly dictates otherwise. Thus, for example, reference to “amemory cell” includes a plurality of such memory cells and reference to“the device” includes reference to one or more devices and equivalentsthereof known to those skilled in the art, and so forth.

The publications discussed herein are provided solely for theirdisclosure prior to the filing date of the present application. Nothingherein is to be construed as an admission that the present invention isnot entitled to antedate such publication by virtue of prior invention.Further, the dates of publication provided may be different from theactual publication dates which may need to be independently confirmed.

DEFINITIONS

When a terminal is referred to as being “left floating”, this means thatthe terminal is not held to any specific voltage, but is allowed tofloat to a voltage as driven by other electrical forces with the circuitthat it forms a part of.

A “resistance change material” refers to a material which resistivitycan be modified by means of electrical signals.

DESCRIPTION

The present invention provides a semiconductor memory having bothvolatile and non-volatile functionality. Referring to FIG. 1, aflowchart 100 illustrates operation of a memory device according to anembodiment of the present invention. At event 102, when power is firstapplied to a memory device having volatile and non-volatile operationmodes, the memory device is placed in an initial state, in the volatileoperational mode and the nonvolatile memory of the device is set to apredetermined state. At event 104 the memory device of the presentinvention operates in the same manner as a conventional DRAM memorycell, i.e., operating as volatile memory. However, during powershutdown, or when power is inadvertently lost, or any other event thatdiscontinues or upsets power to the memory device of the presentinvention, the content of the volatile memory is loaded intonon-volatile memory at event 106, during a process which is referred tohere as “shadowing” (event 106), and the data held in volatile memory islost. Shadowing can also be performed during backup operations, whichmay be performed at regular intervals during DRAM operation 104 periods,and/or at any time that a user manually instructs a backup. During abackup operation, the content of the volatile memory is copied to thenon-volatile memory while power is maintained to the volatile memory sothat the content of the volatile memory also remains in volatile memory.Alternatively, because the volatile memory operation consumes more powerthan the non-volatile storage of the contents of the volatile memory,the device can be configured to perform the shadowing process anytimethe device has been idle for at least a predetermined period of time,thereby transferring the contents of the volatile memory intonon-volatile memory and conserving power. As one example, thepredetermined time period can be about thirty minutes, but of course,the invention is not limited to this time period, as the device could beprogrammed with virtually any predetermined time period that is longerthan the time period required to perform the shadowing process withcareful consideration of the non-volatile memory reliability.

After the content of the volatile memory has been moved during ashadowing operation to nonvolatile memory, the shutdown of the memorydevice occurs, as power is no longer supplied to the volatile memory. Atthis time, the memory device retains the stored data in the nonvolatilememory. Upon restoring power at event 108, the content of thenonvolatile memory is restored by transferring the content of thenon-volatile memory to the volatile memory in a process referred toherein as the “restore” process, after which, upon resetting the memorydevice at event 110, the memory device may be reset to the initial state(event 102) and again operates in a volatile mode, like a DRAM memorydevice, event 104.

FIG. 2 shows an embodiment of a memory cell 50 according to the presentinvention. The cell 50 includes a substrate 12 of a first conductivitytype, such as a p-type conductivity type, for example. Substrate 12 istypically made of silicon, but may comprise germanium, silicongermanium, gallium arsenide, carbon nanotubes, or other semiconductormaterials known in the art. The substrate 12 has a surface 14. A firstregion 16 having a second conductivity type, such as n-type, forexample, is provided in substrate 12 and which is exposed at surface 14.A second region 18 having the second conductivity type is also providedin substrate 12, which is exposed at surface 14 and which is spacedapart from the first region 16. First and second regions 16 and 18 areformed by an implantation process formed on the material making upsubstrate 12, according to any of implantation processes known andtypically used in the art.

A buried layer 22 of the second conductivity type is also provided inthe substrate 12, buried in the substrate 12, as shown. Region 22 isalso formed by an ion implantation process on the material of substrate12. A body region 24 of the substrate 12 is bounded by surface 14, firstand second regions 16,18 and insulating layers 26 (e.g. shallow trenchisolation (STI, which may be made of silicon oxide, for example).Insulating layers 26 insulate cell 50 from neighboring cells 50 whenmultiple cells 50 are joined to make a memory device. A gate 60 ispositioned in between the regions 16 and 18, and above the surface 14.The gate 60 is insulated from surface 14 by an insulating layer 62.Insulating layer 62 may be made of silicon oxide and/or other dielectricmaterials, including high-K dielectric materials, such as, but notlimited to, tantalum peroxide, titanium oxide, zirconium oxide, hafniumoxide, and/or aluminum oxide. The gate 60 may be made of polysiliconmaterial or metal gate electrode, such as tungsten, tantalum, titaniumand their nitrides.

A resistance change memory element 40 is positioned above one of theregions 16, 18 (18 in FIG. 2) having second conductivity type andconnected to one of the terminals 72, 74 (74 in FIG. 2). The resistancechange memory element 40 is shown as a variable resistor, and may beformed from phase change memory material such as a chalcogenide or maytake the form of metal-insulator-metal structure, in which transitionmetal oxide or perovskite metal oxide is used in conjunction with anyreasonably good conductors.

Cell 50 includes several terminals: word line (WL) terminal 70, sourceline (SL) terminal 72, bit line (BL) terminal 74, buried well (BW)terminal 76 and substrate terminal 78. Terminal 70 is connected to thegate 60. Terminal 74 is connected to first region 16 and terminal 72 isconnected to resistance change memory element 40 which is, in turn,connected to second region 18. Alternatively, terminal 72 can beconnected to resistance change memory element 40 and terminal 74 can beconnected to first region 16. Terminal 76 is connected to buried layer22 and terminal 78 is connected to substrate 12.

A non-limiting embodiment of the memory cell 50 is shown in FIG. 3. Thesecond conductivity region 16 is connected to an address line terminal74 through a conductive element 38. The resistance change memory element40 in this embodiment includes a bottom electrode 44, a resistancechange material 46 and a top electrode 48. Resistance change memoryelement 40 is connected to the second conductivity region 18 on thesubstrate 12 through a conductive element 42. The resistance changematerial 46 may be connected to an address line (such as terminal 72 inFIG. 3) through electrode 48 formed from a conductive material. Theconductive element 42 may comprise tungsten or silicided siliconmaterials. Electrodes 44, 48 may be formed from one or more conductivematerials, including, but not limited to titanium nitride, titaniumaluminum nitride, or titanium silicon nitride. Resistance changematerial 46 is a material which properties, such as electricalresistance, can be modified using electrical signals. For the case ofphase change memory elements, the resistivity depends on the crystallinephase of the material, while for the metal oxide materials, theresistivity typically depends on the presence or absence of conductivefilaments. A crystalline phase of a phase change type resistive changematerial exhibits a low resistivity (e.g., ˜1 kΩ) state and an amorphousphase of that material exhibits a high resistivity state (e.g., >100kΩ). Examples of phase change material include alloys containingelements from Column VI of the periodic table, such as GeSbTe alloys.Examples of metal-insulator-metal resistance change materials include avariety of oxides such as Nb₂O₅, Al₂O₃, Ta₂O₅, TiO₂, and NiO andperovskite metal oxides, such as SrZrO₃, (Pr,Ca)MnO₃ and SrTiO₃:Cr.

When power is applied to cell 50, cell 50 operates like a capacitorlessDRAM cell. In a capacitorless DRAM device, the memory information (i.e.,data that is stored in memory) is stored as charge in the floating bodyof the transistor, i.e., in the bodies 24 of the cells 50 of a memorydevice. The presence of the electrical charge in the floating body 24modulates the threshold voltage of the cell 50, which determines thestate of the cell 50. In one embodiment, the non-volatile memory 40 isinitialized to have a low resistance state.

A read operation can be performed on memory cell 50 through thefollowing bias condition. A neutral voltage is applied to the substrateterminal 78, a neutral or positive voltage is applied to the BW terminal76, a substantially neutral voltage is applied to SL terminal 72, apositive voltage is applied to BL terminal 74, and a positive voltagemore positive than the voltage applied to BL terminal 74 is applied toWL terminal 70. If cell 50 is in a state “1” having holes in the bodyregion 24, then a lower threshold voltage (gate voltage where thetransistor is turned on) is observed compared to the threshold voltageobserved when cell 50 is in a state “0” having no holes in body region24. In one particular non-limiting embodiment, about 0.0 volts isapplied to terminal 72, about +0.4 volts is applied to terminal 74,about +1.2 volts is applied to terminal 70, about +0.6 volts is appliedto terminal 76, and about 0.0 volts is applied to terminal 78. However,these voltage levels may vary, while maintaining the relativerelationships between the voltages applied, as described above.

Alternatively, a substantially neutral voltage is applied to thesubstrate terminal 78, a neutral or positive voltage is applied to theBW terminal 76, a substantially neutral voltage is applied to SLterminal 72, a positive voltage is applied to BL terminal 74, and apositive voltage is applied to WL terminal 70, with the voltage appliedto BL terminal 74 being more positive than the voltage applied toterminal 70. If cell 50 is in a state “1” having holes in the bodyregion 24, then the parasitic bipolar transistor formed by the SLterminal 72, floating body 24, and BL terminal 74 will be turned on anda higher cell current is observed compared to when cell 50 is in a state“0” having no holes in body region 24. In one particular non-limitingembodiment, about 0.0 volts is applied to terminal 72, about +3.0 voltsis applied to terminal 74, about +0.5 volts is applied to terminal 70,about +0.6 volts is applied to terminal 76, and about 0.0 volts isapplied to terminal 78. However, these voltage levels may vary, whilemaintaining the relative relationships between the voltages applied, asdescribed above.

Alternatively, a positive voltage is applied to the substrate terminal78, a substantially neutral voltage is applied to BL terminal 74, and apositive voltage is applied to WL terminal 70. Cell 50 provides aP1-N2-P3-N4 silicon controlled rectifier device, with substrate 78functioning as the P1 region, buried layer 22 functioning as the N2region, body region 24 functioning as the P3 region and region 16 or 18functioning as the N4 region. The functioning of the silicon controllerrectifier device is described in further detail in application Ser. No.12/533,661 filed Jul. 31, 2009 and titled “Methods of OperatingSemiconductor Memory Device with Floating Body Transistor Using SiliconControlled Rectifier Principle”. Application Ser. No. 12/533,661 ishereby incorporated herein, in its entirety, by reference thereto. Inthis example, the substrate terminal 78 functions as the anode andterminal 72 or terminal 74 functions as the cathode, while body region24 functions as a p-base to turn on the SCR device. If cell 50 is in astate “1” having holes in the body region 24, the silicon controlledrectifier (SCR) device formed by the substrate, buried well, floatingbody, and the BL junction will be turned on and a higher cell current isobserved compared to when cell 50 is in a state “0” having no holes inbody region 24. A positive voltage is applied to WL terminal 70 toselect a row in the memory cell array 80 (e.g., see FIG. 13), whilenegative voltage is applied to WL terminal 70 for any unselected rows.The negative voltage applied reduces the potential of floating body 24through capacitive coupling in the unselected rows and turns off the SCRdevice of each cell 50 in each unselected row. In one particularnon-limiting embodiment, about +0.8 volts is applied to terminal 78,about +0.5 volts is applied to terminal 70 (for the selected row), andabout 0.0 volts is applied to terminal 74. However, these voltage levelsmay vary.

FIG. 4 illustrate write state “1” operations that can be carried out oncell 50, by performing band-to-band tunneling hot hole injection orimpact ionization hot hole injection. To write state “1” usingband-to-band tunneling mechanism, the following voltages are applied tothe terminals: a positive voltage is applied to BL terminal 74, asubstantially neutral voltage is applied to SL terminal 72, a negativevoltage is applied to WL terminal 70, a positive voltage is applied toBW terminal 76, and a substantially neutral voltage is applied to thesubstrate terminal 78. Under these conditions, holes are injected fromBL terminal 74 into the floating body region 24, leaving the body region24 positively charged. In one particular non-limiting embodiment, acharge of about 0.0 volts is applied to terminal 72, a charge of about+2.0 volts is applied to terminal 74, a charge of about −1.2 volts isapplied to terminal 70, a charge of about +0.6 volts is applied toterminal 76, and about 0.0 volts is applied to terminal 78. However,these voltage levels may vary, while maintaining the relativerelationships between the voltages applied, as described above.

Alternatively, to write state “1” using an impact ionization mechanism,the following voltages can be applied to the terminals: a positivevoltage is applied to BL terminal 74, a substantially neutral voltage isapplied to SL terminal 72, a positive voltage is applied to WL terminal70, a positive voltage less positive than the positive voltage appliedto BL terminal 74 is applied to BW terminal 76, and a substantiallyneutral voltage is applied to the substrate terminal 78. Under theseconditions, holes are injected from BL terminal 74 into the floatingbody region 24, leaving the body region 24 positively charged. In oneparticular non-limiting embodiment, +0.0 volts is applied to terminal72, a charge of about +2.0 volts is applied to terminal 74, a charge ofabout +0.5 volts is applied to terminal 70, a charge of about +0.6 voltsis applied to terminal 76, and about 0.0 volts is applied to terminal78. However, these voltage levels may vary, while maintaining therelative relationships between the voltages applied, as described above.

In an alternate write state “1” using impact ionization mechanism, apositive bias can be applied to substrate terminal 78. The parasiticsilicon controlled rectifier device of the selected cell is now turnedoff due to the negative potential between the substrate terminal 78 andthe BL terminal 74. The functioning of the silicon controller rectifierdevice is described in further detail in application Ser. No. 12/533,661filed Jul. 31, 2009 and titled “Methods of Operating SemiconductorMemory Device with Floating Body Transistor Using Silicon ControlledRectifier Principle”. Under these conditions, electrons will flow nearthe surface of the transistor, and generate holes through impactionization mechanism. The holes are subsequently injected into thefloating body region 24. In one particular non-limiting embodiment, +0.0volts is applied to terminal 72, a charge of about +2.0 volts is appliedto terminal 74, a charge of about +0.5 volts is applied to terminal 70,and about +0.8 volts is applied to terminal 78. However, these voltagelevels may vary, while maintaining the relative relationships betweenthe voltages applied, as described above.

Alternatively, the silicon controlled rectifier device of cell 50 can beput into a state “1” (i.e., by performing a write “1” operation) byapplying the following bias: a neutral voltage is applied to BL terminal74, a positive voltage is applied to WL terminal 70, and a positivevoltage is applied to the substrate terminal 78, while SL terminal 72and BW terminal 76 are left floating. The positive voltage applied tothe WL terminal 70 will increase the potential of the floating body 24through capacitive coupling and create a feedback process that turns theSCR device on. Once the SCR device of cell 50 is in conducting mode(i.e., has been “turned on”) the SCR becomes “latched on” and thevoltage applied to WL terminal 70 can be removed without affecting the“on” state of the SCR device. In one particular non-limiting embodiment,a voltage of about 0.0 volts is applied to terminal 74, a voltage ofabout +0.5 volts is applied to terminal 70, and about +3.0 volts isapplied to terminal 78. However, these voltage levels may vary, whilemaintaining the relative relationships between the voltages applied, asdescribed above, e.g., the voltage applied to terminal 78 remainsgreater than the voltage applied to terminal 74.

A write “0” operation of the cell 50 is now described with reference toFIG. 5. To write “0” to cell 50, a negative bias is applied to SLterminal 72 and/or BL terminal 74, a neutral or negative voltage isapplied to WL terminal 70, and a substantially neutral voltage isapplied to substrate terminal 78. Under these conditions, the p-njunction (junction between 24 and 16 and between 24 and 18) isforward-biased, evacuating any holes from the floating body 24. In oneparticular non-limiting embodiment, about −1.0 volts is applied toterminal 72, about −1.0 volts is applied to terminal 70, and about 0.0volts is applied to terminal 78. However, these voltage levels may vary,while maintaining the relative relationships between the voltagesapplied, as described above.

Alternatively, a write “0” operation can be performed to cell 50 byapplying a positive bias to WL terminal 70, and substantially neutralvoltages to SL terminal 72, BL terminal 74, and substrate terminal 78.Under these conditions, the holes will be evacuated from the floatingbody 24. In one particular non-limiting embodiment, about 1.0 volts isapplied to terminal 70, about 0.0 volts are applied to terminals 72 and74, and about 0.0 volts is applied to terminal 78. However, thesevoltage levels may vary, while maintaining the relative relationshipsbetween the voltages applied, as described above.

Alternatively, a write “0” operation can be performed by putting thesilicon controlled rectifier device into the blocking mode. This can beperformed by applying the following bias: a positive voltage is appliedto BL terminal 74, a positive voltage is applied to WL terminal 70, anda positive voltage is applied to the substrate terminal 78, whileleaving SL terminal 72 and BW terminal 76 floating. Under theseconditions the voltage difference between anode and cathode, defined bythe voltages at substrate terminal 78 and BL terminal 74, will becometoo small to maintain the SCR device in conducting mode. As a result,the SCR device of cell 50 will be turned off. In one particularnon-limiting embodiment, a voltage of about +0.8 volts is applied toterminal 74, a voltage of about +0.5 volts is applied to terminal 70,and about +0.8 volts is applied to terminal 78. However, these voltagelevels may vary, while maintaining the relative relationships betweenthe charges applied, as described above.

When power down is detected, e.g., when a user turns off the power tocell 50, or the power is inadvertently interrupted, or for any otherreason, power is at least temporarily discontinued to cell 50, datastored in the floating body region 24 is transferred to the resistancechange memory 40. This operation is referred to as “shadowing” and isdescribed with reference to FIGS. 6A-6B.

To perform a shadowing process, a positive voltage is applied toterminal 72 and a substantially neutral voltage is applied to terminal74. A neutral voltage or slightly positive voltage is applied terminal70, a low positive voltage is applied to terminal 76, and asubstantially neutral voltage is applied to terminal 78. These voltagelevels can be driven by the appropriate circuitry controlling the memorycell array when the power shutdown is expected (such as during standbyoperation or when entering power savings mode) or from externalcapacitors in the event of abrupt and sudden power interruption.

When the floating body has a positive potential, the bipolar transistorformed by the SL terminal 72, floating body 24, and BL terminal 74 willbe turned on. The positive voltage applied to terminal 72 is controlled(e.g., varied to maintain a constant current) such that the electricalcurrent flowing through the resistance change memory 40 is sufficient tochange the state of the materials from a low resistivity state to a highresistivity state. In the case of phase change materials, this involvesthe change of the crystallinity of the chalcogenide materials fromcrystalline state to amorphous state, while in metal oxide materials,this typically involves the annihilation of conductive filaments.Accordingly, the non-volatile resistance change material will be in ahigh resistivity state when the volatile memory of cell 50 is in state“1” (i.e. floating body 24 is positively charged).

When the floating body is neutral or negatively charged, the bipolartransistor formed by the SL terminal 72, floating body 24, and BLterminal 74 will be turned off. Therefore, when voltages are applied asdescribed above, no electrical current will flow through the resistancechange memory 40 and it will retain its low resistivity state.Accordingly, the non-volatile resistance change material will be in alow resistivity state when the volatile memory of cell 50 is in state“0” (i.e. floating body is neutral or negatively charged).

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 72, a constant current of about 700 μA isapplied to terminal 74, about +1.0 volts is applied to terminal 70,about +0.6 volts is applied to terminal 76, and about 0.0 volts isapplied to terminal 78. However, these voltage and current levels mayvary, while maintaining the relative relationships between the chargesapplied, as described above. To change the non-volatile phase changememory from low resistivity state to high resistivity state, a currentlevel between 600 μA and 1 mA can be used. Lower current will be neededas the phase change material is scaled to smaller geometry. The currentlevels employed in metal oxide systems vary greatly depending on thematerials used, ranging from tens of microamperes to tens ofmilliamperes.

Note that this process occurs non-algorithmically, as the state of thefloating body 24 does not have to be read, interpreted, or otherwisemeasured to determine what state to write the non-volatile resistancechange memory 40 to. Rather, the shadowing process occurs automatically,driven by electrical potential differences. Accordingly, this process isorders of magnitude faster than one that requires algorithmicintervention.

When power is restored to cell 50, the state of the cell 50 as stored onthe non-volatile resistance change memory 40 is restored into floatingbody region 24. The restore operation (data restoration fromnon-volatile memory to volatile memory) is described with reference toFIGS. 7A-7B. In one embodiment, to perform the restore operation, anegative voltage is applied to terminal 70, a positive voltage isapplied to terminal 74, a negative voltage is applied to terminal 72, alow positive voltage is applied to terminal 76, and a substantiallyneutral voltage is applied to terminal 78.

This condition will result in result in band-to-band tunneling holeinjection into the floating body 24. However, if the resistance changememory is in low resistivity state, the negative voltage applied toterminal 72 will evacuate holes in the floating body 24 because the p-njunction formed by the floating body 24 and the region 18 isforward-biased. Consequently, the volatile memory state of memory cell50 will be restored to state “0” upon completion of the restoreoperation, restoring the state that the memory cell 50 held prior to theshadowing operation.

If the resistance change memory 40 is in high resistivity state, nocurrent flows through the resistance change memory 40, hence the holesaccumulated in the floating body 24 will not be evacuated. As a result,the memory state “1” that the memory cell 50 held prior to the shadowingoperation will be restored.

In one particular non-limiting example of this embodiment, about −1.0volts is applied to terminal 72, about +2.0 volts is applied to terminal74, about −1.2 volts is applied to terminal 70, about +0.6 volts isapplied to terminal 76, and a neutral voltage is applied to thesubstrate terminal 78. However, these voltage levels may vary, whilemaintaining the relative relationships between the charges applied, asdescribed above.

Note that this process occurs non-algorithmically, as the state of thenon-volatile resistance change memory 40 does not have to be read,interpreted, or otherwise measured to determine what state to restorethe floating body 24 to. Rather, the restoration process occursautomatically, driven by resistivity state differences. Accordingly,this process is orders of magnitude faster than one that requiresalgorithmic intervention.

After restoring the memory cell(s) 50, the resistance change memory(ies)40 is/are reset to a predetermined state, e.g., a low resistivity stateas illustrated in FIG. 8, so that each resistance change memory 40 has aknown state prior to performing another shadowing operation.

To perform a reset operation according to the embodiment of FIG. 8, aneutral or slightly positive voltage is applied to terminal 70, asubstantially neutral voltage is applied to BL terminal 74, a positivevoltage is applied to SL terminal 72, a positive voltage is applied toterminal 76, and a neutral voltage is applied to substrate terminal 78.

When the floating body has a positive potential, the bipolar transistorformed by the SL terminal 72, floating body 24, and BL terminal 74 willbe turned on. The positive voltage applied to terminal 72 is controlled(e.g., varied to maintain a constant current) such that the electricalcurrent flowing through the resistance change memory 40 is sufficient tochange the resistivity of the resistance change materials from a highresistivity state to a low resistivity state. The voltage applied toterminal 72 initially has to exceed a threshold value (sometimesreferred to as ‘dynamic threshold voltage’) to ensure that allresistance change memory materials (including ones in high resistivitystate) are conducting. Accordingly, all the non-volatile resistancechange memory 40 will be in a low resistivity state upon completion ofthe reset operation.

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 74, a constant current of about 400 μA isapplied to terminal 72, about +1.0 volts is applied to terminal 70, andabout +0.6 volts is applied to terminal 76. However, these voltagelevels may vary, while maintaining the relative relationships betweenthe charges applied, as described above. The dynamic threshold voltageof a phase change non-volatile memory is typically greater than 1.0volts, upon which the high resistivity phase change materials willbecome conducting. The current level required to change phase changememory materials to low resistivity state typically range between 100 μAto 600 μA. For the case of metal oxide systems, the threshold voltageand the current level vary depending on the materials.

In another embodiment, the resistance change memory 40 is initialized tohave a high resistivity state. When power is applied to cell 50, cell 50operates like a capacitorless DRAM cell. In a capacitorless DRAM device,the memory information (i.e., data that is stored in memory) is storedas charge in the floating body of the transistor, i.e., in the body 24of cell 50. The presence of the electrical charge in the floating body24 modulates the threshold voltage of the cell 50, which determines thestate of the cell 50.

A read operation can be performed on memory cell 50 through thefollowing exemplary bias condition. A neutral voltage is applied to thesubstrate terminal 78, a neutral or positive voltage is applied to theBW terminal 76, a substantially neutral voltage is applied to SLterminal 72, a positive voltage is applied to BL terminal 74, and apositive voltage more positive than the voltage applied to BL terminal74 is applied to WL terminal 70. If cell 50 is in a state “1” havingholes in the body region 24, then a lower threshold voltage (gatevoltage where the transistor is turned on) is observed compared to thethreshold voltage observed when cell 50 is in a state “0” having noholes in body region 24. In one particular non-limiting embodiment,about 0.0 volts is applied to terminal 72, about +0.4 volts is appliedto terminal 74, about +1.2 volts is applied to terminal 70, about +0.6volts is applied to terminal 76, and about 0.0 volts is applied toterminal 78. However, these voltage levels may vary, while maintainingthe relative relationships between the voltages applied, as describedabove.

Alternatively, a neutral voltage is applied to the substrate terminal78, a neutral or positive voltage is applied to the BW terminal 76, apositive voltage is applied to BL terminal 74, and SL terminal 72 isleft floating or grounded, and a neutral or positive voltage lesspositive than the positive voltage applied to BL terminal 74 is appliedto WL terminal 70. If cell 50 is in a state “1” having holes in the bodyregion 24, then the bipolar transistor formed by BL junction 16,floating body 24, and buried layer 22 is turned on. As a result, ahigher cell current is observed compared to when cell 50 is in a state“0” having no holes in body region 24. In one particular non-limitingembodiment, terminal 72 is left floating, about +3.0 volts is applied toterminal 74, about +0.5 volts is applied to terminal 70, about +0.6volts is applied to terminal 76, and about 0.0 volts is applied toterminal 78. However, these voltage levels may vary while maintainingthe relative relationships between the voltages applied, as describedabove.

In another embodiment of the read operation that can be performed onmemory cell 50, a positive voltage is applied to the substrate terminal78, a neutral voltage is applied to BL terminal 74, SL terminal 72 isleft floating or grounded, a neutral or positive voltage is applied toWL terminal 70, while BW terminal 76 is left floating. If cell 50 is instate “1” with the body region 24 positively charged, the siliconcontrolled rectifier (SCR) device formed by the substrate 12, buriedwell 22, floating body 24, and the BL junction 74 will be turned on anda higher cell current is observed compared to when cell 50 is in a state“0” with the body region 24 in neutral state or negatively charged. Inone particular non-limiting embodiment, about +0.8 volts is applied toterminal 78, about +0.5 volts is applied to terminal 70, and about 0.0volts is applied to terminal 74, while terminals 72 and 76 are leftfloating. However, these voltage levels may vary while maintaining therelative relationships between the voltages applied, as described above.

The following conditions describe a write state “1” operation that canbe performed on memory cell 50, where the resistance change memory 40 isin a high resistivity state. To write state “1” using a band-to-bandtunneling mechanism, the following voltages are applied to theterminals: a positive voltage is applied to BL terminal 74, SL terminal72 is left floating or grounded, a negative voltage is applied to WLterminal 70, a neutral or positive voltage is applied to the BW terminal76, and a neutral voltage is applied to the substrate terminal 78. Underthese conditions, holes are injected from BL junction 16 into thefloating body region 24, leaving the body region 24 positively charged.In one particular non-limiting embodiment, about +2.0 volts is appliedto terminal 74, about −1.2 volts is applied to terminal 70, about +0.6volts is applied to terminal 76, about 0.0 volts is applied to terminal78, and terminal 72 is left floating. However, these voltage levels mayvary while maintaining the relative relationships between the voltagesapplied, as described above.

Alternatively, to write state “1” using an impact ionization mechanism,the following voltages are applied to the terminals: a positive voltageis applied to BL terminal 74, SL terminal 72 is left floating orgrounded, a positive voltage is applied to WL terminal 70, a neutral orpositive voltage is applied to BW terminal 76, and a substantiallyneutral voltage is applied to the substrate terminal 78. Under theseconditions, holes are injected from BL junction 16 into the floatingbody region 24, leaving the body region 24 positively charged. In oneparticular non-limiting embodiment, a potential of about +2.0 volts isapplied to terminal 74, a potential of about +0.5 volts is applied toterminal 70, a potential of about +0.6 volts is applied to terminal 76,and about 0.0 volts is applied to terminal 78, while terminal 72 is leftfloating. However, these voltage levels may vary while maintaining therelative relationships between the voltages applied, as described above.

Alternatively, the silicon controlled rectifier device can be operatedto put cell 50 into a state “1” by applying the following bias: asubstantially neutral voltage is applied to BL terminal 74, a positivevoltage is applied to WL terminal 70, and a positive voltage is appliedto the substrate terminal 78, while SL terminal 72 and BW terminal 76are left floating. The positive voltage applied to the WL terminal 70will increase the potential of the floating body 24 through capacitivecoupling and create a feedback process that turns the device on. In oneparticular non-limiting embodiment, a charge of about 0.0 volts isapplied to terminal 74, a charge of about +0.5 volts is applied toterminal 70, and about +3.0 volts is applied to terminal 78. However,these voltage levels may vary while maintaining the relativerelationships between the voltages applied, as described above.

A write “0” operation of the cell 50 is now described. To write “0” tocell 50, a negative bias is applied to BL terminal 74, SL terminal 72 isgrounded or left floating, a neutral or negative voltage is applied toWL terminal 70, a neutral or positive voltage is applied to BW terminal76, and a substantially neutral voltage is applied to substrate terminal78. Under these conditions, the p-n junction (junction between 24 and18) is forward-biased, evacuating any holes from the floating body 24.In one particular non-limiting embodiment, about −2.0 volts is appliedto terminal 74, about −1.2 volts is applied to terminal 70, about 0.0volts is applied to terminal 76, and about 0.0 volts is applied toterminal 78, while terminal 72 is grounded or left floating. However,these voltage levels may vary while maintaining the relativerelationships between the voltages applied, as described above.

In an alternate write “0” operation, a neutral voltage is applied to BLterminal 74, a positive voltage is applied to WL terminal 70, a neutralor positive voltage is applied to BW terminal 76, a substantiallyneutral voltage is applied to substrate terminal 78, while terminal 72is grounded or left floating. Under these conditions, holes from thefloating body 24 are evacuated. In one particular non-limitingembodiment, about +1.5 volts is applied to terminal 70, about 0.0 voltsis applied to terminal 74, about 0.0 volts is applied to terminal 76,about 0.0 volts is applied to terminal 78, while terminal 72 is groundedor left floating. However, these voltage levels may vary whilemaintaining the relative relationships between the voltages applied, asdescribed above.

Alternatively, a write “0” operation can be performed by putting thesilicon controlled rectifier device of cell 50 into the blocking mode.This can be performed by applying the following bias: a positive voltageis applied to BL terminal 74, a positive voltage is applied to WLterminal 70, and a positive voltage is applied to the substrate terminal78, while leaving SL terminal 72 and BW terminal 76 floating. In oneparticular non-limiting embodiment, a charge of about +0.8 volts isapplied to terminal 74, a charge of about +0.5 volts is applied toterminal 70, and about +0.8 volts is applied to terminal 78. However,these voltage levels may vary, while maintaining the relativerelationships between the charges applied, as described above.

To perform a shadowing process on memory cell 50, a positive voltage isapplied to terminal 72 and a substantially neutral voltage is applied toterminal 74. A neutral voltage or positive voltage is applied terminal70 and a low positive voltage is applied to terminal 76, while thesubstrate terminal 78 is grounded.

When the floating body has a positive potential, the bipolar transistorformed by the SL terminal 72, floating body 24, and BL terminal 74and/or BW terminal 76 will be turned on. The positive voltage applied toterminal 72 is controlled (e.g., varied to maintain a constant current)such that the electrical current flowing through the resistance changememory 40 is sufficient to change the resistivity of the materials froma high resistivity state to a low resistivity state. The voltage appliedto terminal 72 initially has to exceed the dynamic threshold voltage(typically larger than 1.0 volts) to ensure that the resistance changememory 40 (even if it is in high resistivity state) will be conducting.Accordingly, the non-volatile resistance change material will be in alow resistivity state when the volatile memory of cell 50 is in state“1” (i.e. floating body 24 is positively charged).

When the floating body is neutral or negatively charged, the bipolartransistor formed by the SL terminal 72, floating body 24, and BLterminal 74 and/or BW terminal 76 will be turned off. Therefore, whenvoltages are applied as described above, no electrical current will flowthrough the resistance change memory 40 and it will retain its highresistivity state. Accordingly, the non-volatile resistance changematerial will be in a high resistivity state when the volatile memory ofcell 50 is in state “0” (i.e. floating body is neutral or negativelycharged).

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 74, a constant current of about 400 μA isapplied to terminal 72, about +1.0 volts is applied to terminal 70,about +0.6 volts is applied to terminal 76, and about 0.0 volts isapplied to terminal 78. However, these voltage and current levels mayvary, while maintaining the relative relationships between the chargesapplied, as described above. The current level required to change phasechange memory materials to low resistivity state typically range between100 μA to 600 μA, while that of metal oxide systems vary depending onthe materials. The current level is expected to decrease as theresistance change material is scaled to smaller geometry.

In another embodiment, the following bias can be applied: a neutralvoltage is applied to terminal 72, a neutral voltage or positive voltageis applied to terminal 70, a positive voltage is applied to terminal 78,while terminals 74 and 76 are left floating. When the floating body 24has a positive potential, the silicon controlled rectifier device formedby the SL 72 junction, floating body 24, buried layer 22, and substrate12 will be turned on. The positive voltage applied to terminal 78 iscontrolled (e.g., varied to maintain a constant current) such that theelectrical current flowing through the resistance change memory 40 issufficient to change the resistivity of the materials from a highresistivity state to a low resistivity state. For phase changematerials, the crystalline state changes from amorphous phase tocrystalline phase, while in metal oxide systems, this typically involvesthe formation of conductive filaments. Accordingly, the non-volatileresistance change material will be in a low resistivity state when thevolatile memory of cell 50 is in state “1” (i.e. floating body 24 ispositively charged).

When the floating body 24 is neutral or negatively charged, the siliconcontrolled rectifier device will be turned off. Therefore, no electricalcurrent flows through the resistance change memory 40 and it will retainits high resistivity state. Accordingly, the non-volatile resistancechange material will be in a high resistivity state when the volatilememory of cell 50 is in state “0” (i.e. floating body 24 is neutral ornegatively charged).

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 72, a constant current of about 400 μA isapplied to terminal 78, about +1.0 volts is applied to terminal 70,while terminals 74 and 76 are left floating. However, these voltagelevels may vary while maintaining the relative relationships between thevoltages applied, as described above. The current level required tochange phase change memory materials to low resistivity state typicallyrange between 100 μA to 600 μA and is expected to decrease as the phasechange memory is being scaled to smaller dimension. In metal oxidesystems, it varies depending on the materials used.

The restore operation (data restoration from non-volatile memory tovolatile memory) is now described. In one embodiment, to perform therestore operation, a negative voltage is applied to terminal 70, apositive voltage is applied to terminal 72, a neutral voltage is appliedto terminal 74, a neutral or low positive voltage is applied to terminal76, and a substantially neutral voltage is applied to terminal 78.

If the resistance change memory 40 is in low resistivity state, thiscondition will result in holes being injected into the floating body 24,generated through the band-to-band tunneling mechanism, therebyrestoring the state “1” that the memory cell 50 held prior to theshadowing operation. If the resistance change memory 40 is in highresistivity state, no holes will be generated; consequently, thevolatile memory state of memory cell 50 will be restored to state “0”.Upon completion of the restore operation, the volatile memory of cell 50is restored to the state that the volatile memory of memory cell 50 heldprior to the shadowing operation.

In one particular non-limiting example of this embodiment, about +2.0volts is applied to terminal 72, about +0.0 volts is applied to terminal74, about −1.2 volts is applied to terminal 70, about 0.0 volts isapplied to terminal 76, and about 0.0 volts is applied to terminal 78.However, these voltage levels may vary, while maintaining the relativerelationships between the charges applied, as described above.

In another embodiment of the restore operation, the following bias canbe applied: a neutral voltage is applied to terminal 72, a positivevoltage is applied to terminal 70, a positive voltage is applied toterminal 78, while terminals 74 and 76 are left floating. The positivevoltage applied to the WL terminal 70 will increase the potential of thefloating body 24 through capacitive coupling. If the resistance changememory 40 is in a low resistivity state, this will create a feedbackprocess that latches the device on and the volatile state of the memorycell 50 will be in state “1”. If the resistance change memory 40 is in ahigh resistivity state, the volatile state of the memory cell 50 willremain in state “0”. In one particular non-limiting embodiment, a chargeof about 0.0 volts is applied to terminal 72, a charge of about +0.5volts is applied to terminal 70, about +0.8 volts is applied to terminal78, while terminals 74 and 76 are left floating. However, these voltagelevels may vary while maintaining the relative relationships between thevoltages applied, as described above.

After restoring the memory cell(s) 50, the resistance change memory 40is/are reset to a high resistivity state, so that each resistance changememory 40 has a known state prior to performing another shadowingoperation.

To perform a reset operation according to the embodiment, a neutralvoltage or positive voltage is applied to terminal 70, a substantiallyneutral voltage is applied to BL terminal 74, a positive voltage isapplied to SL terminal 72, a neutral or positive voltage is applied toterminal 76, and a substantially neutral voltage is applied to terminal78.

When the floating body 24 has a positive potential, the bipolartransistor formed by the SL terminal 72, floating body 24, and BLterminal 74 and/or BW terminal 76 will be turned on. The positivevoltage applied to terminal 72 is controlled (e.g., varied to maintain aconstant current) such that the electrical current flowing through theresistance change memory 40 is sufficient to change the resistivity ofthe materials from a low resistivity state to a high resistivity state.Accordingly, all the non-volatile resistance change memory 40 will be ina high resistivity state upon completion of the reset operation.

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 74, a constant current of about 700 μA isapplied to terminal 72, about +1.0 volts is applied to terminal 70,about +0.6 volts is applied to terminal 76, and about 0.0 volts isapplied to terminal 78. However, these voltage levels may vary, whilemaintaining the relative relationships between the charges applied, asdescribed above. To change the non-volatile phase change memory from lowresistivity state to high resistivity state, a current level between 600μA and 1 mA can be used. Lower current will be needed as the phasechange material is scaled to smaller geometry.

In an alternative embodiment of the reset operation, the following biascan be applied: a neutral voltage is applied to terminal 72, a neutralvoltage or positive voltage is applied to terminal 70, a positivevoltage is applied to terminal 78, while terminals 74 and 76 are leftfloating.

When the floating body 24 has a positive potential, the siliconcontrolled rectifier device formed by the SL 72 junction, floating body24, buried layer 22, and substrate 12 will be turned on. The positivevoltage applied to terminal 78 is controlled (e.g., varied to maintain aconstant current) such that the electrical current flowing through theresistance change memory 40 is sufficient to change the resistivity ofthe materials from a low resistivity state to a high resistivity state.Accordingly, the non-volatile resistance change material will be in ahigh resistivity state upon completion of the reset operation.

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 72, a constant current of about 700 μA isapplied to terminal 78, about +1.0 volts is applied to terminal 70,while terminals 74 and 76 are left floating. However, these voltagelevels may vary while maintaining the relative relationships between thevoltages applied, as described above. To change the non-volatile phasechange memory from low resistivity state to high resistivity state, acurrent level between 600 μA and 1 mA can be used. Lower current will beneeded as the phase change material is scaled to smaller geometry.

In this embodiment of the memory cell operations, the volatile memoryoperations can be performed in the same manner regardless of the stateof the resistance change memory, i.e. there is no interference from thenon-volatile memory state to the volatile memory operations. Analternative embodiment of the memory cell operations is described inflowchart 200 in FIG. 14. At event 202, when power is applied to thememory device, the memory device can be operated without thenon-volatile memory of the device being set to a predetermined knownstate. The memory device may operate in the same manner as a volatilememory cell upon restore operation 208. As a result, the memory cell 50can operate into the volatile operation mode faster, without firstresetting the non-volatile memory state. The reset operation 204 can beperformed just prior to writing new data into the non-volatile memorycell during the shadowing operation 206. In an alternative embodiment,the volatile and non-volatile memory can be configured to storedifferent data, for example when the non-volatile memory is being usedto store “permanent data”, which does not change in value during routineuse. For example, this includes operating system image, applications,multimedia files, etc. The volatile memory can be used to store statevariable. In this embodiment, the reset operation 204 can be bypassed.

FIGS. 9A-9B show another embodiment (perspective, cross-sectional viewand top view, respectively) of the memory cell 50 described in thisinvention. In this embodiment, cell 50 has a fin structure 52 fabricatedon substrate 12, so as to extend from the surface of the substrate toform a three-dimensional structure, with fin 52 extending substantiallyperpendicularly to, and above the top surface of the substrate 12. Finstructure 52 is conductive and is built on buried well layer 22. Buriedwell layer 22 is also formed by an ion implantation process on thematerial of substrate 12. Buried well layer 22 insulates the floatingsubstrate region 24, which has a first conductivity type, from the bulksubstrate 12. Fin structure 52 includes first and second regions 16, 18having a second conductivity type. Thus, the floating body region 24 isbounded by the top surface of the fin 52, the first and second regions16, 18 the buried well layer 22, and insulating layers 26. Insulatinglayers 26 insulate cell 50 from neighboring cells 50 when multiple cells50 are joined to make a memory device. Fin 52 is typically made ofsilicon, but may comprise germanium, silicon germanium, galliumarsenide, carbon nanotubes, or other semiconductor materials known inthe art.

Device 50 further includes gates 60 on three sides of the floatingsubstrate region 24 as shown in FIG. 9. Alternatively, gates 60 canenclose two opposite sides of the floating substrate region 24. Gates 60are insulated from floating body 24 by insulating layers 62. Gates 60are positioned between the first and second regions 16, 18, adjacent tothe floating body 24.

A resistance change memory element 40 is positioned above the regionhaving second conductivity type. The resistance change memory element 40is shown as a variable resistor, and may be formed from resistancechange memory element known in the art. In one embodiment, thenon-volatile memory is initialized to have a low resistance state. Inanother alternate embodiment, the non-volatile memory is initialized tohave a high resistance state.

Cell 50 includes several terminals: word line (WL) terminal 70, sourceline (SL) terminal 72, bit line (BL) terminal 74, buried well (BW)terminal 76 and substrate terminal 78. Terminal 70 is connected to thegate 60. Terminal 74 is connected to first region 16 and terminal 72 isconnected to resistance change memory element 40, which is, in turn,connected to second region 18. Alternatively, terminal 74 can beconnected to resistance change memory element 40 and terminal 72 can beconnected to first region 16. Terminal 76 is connected to buried layer22 and terminal 78 is connected to substrate 12.

The operations of the embodiment of memory cell 50 shown in FIGS. 9A-9Bare the same as those described above with regard to the embodiment ofmemory cell 50 of FIG. 2. Equivalent terminals have been assigned withthe same numbering labels in both figures.

FIG. 10 illustrates another embodiment of the memory cell 50 fabricatedon a silicon-on-insulator (SOI) substrate. The cell 50 includes asubstrate 12 of a first conductivity type, such as a p-type conductivitytype, for example. Substrate 12 is typically made of silicon, but maycomprise germanium, silicon germanium, gallium arsenide, carbonnanotubes, or other semiconductor materials known in the art. Thesubstrate 12 has a surface 14. A first region 16 having a secondconductivity type, such as n-type, for example, is provided in substrate12 and which is exposed at surface 14. A second region 18 having thesecond conductivity type is also provided in substrate 12, which isexposed at surface 14 and which is spaced apart from the first region16. First and second regions 16 and 18 are formed by an implantationprocess formed on the material making up substrate 12, according to anyof implantation processes known and typically used in the art. A buriedinsulator layer 22 insulates the body region 24 from the substrate 12.The body region 24 is bounded by surface 14, first and second regions 16and 18, and the buried insulator layer 22. The buried insulator layer 22may be buried oxide (BOX).

A gate 60 is positioned in between the regions 16 and 18, and above thesurface 14. The gate 60 is insulated from surface 14 by an insulatinglayer 62. Insulating layer 62 may be made of silicon oxide and/or otherdielectric materials, including high-K dielectric materials, such as,but not limited to, tantalum peroxide, titanium oxide, zirconium oxide,hafnium oxide, and/or aluminum oxide. The gate 60 may be made ofpolysilicon material or metal gate electrode, such as tungsten,tantalum, titanium and their nitrides.

A resistance change memory element 40 is positioned above the regionhaving second conductivity type 16. The resistance change memory element40 is shown as a variable resistor, and may be formed from phase changematerial or metal-insulator-metal systems as described in previousembodiments above.

Cell 50 includes several terminals: word line (WL) terminal 70, sourceline (SL) terminal 72, bit line (BL) terminal 74, and substrate terminal78. Terminal 70 is connected to the gate 60. Terminal 74 is connected tofirst region 16 and terminal 72 is connected to resistance change memoryelement 40 which is connected to second region 18. Alternatively,terminal 74 can be connected to resistance change memory element 40 andterminal 72 can be connected to first region 16. Terminal 78 isconnected to substrate 12.

When power is applied to cell 50, cell 50 operates like a capacitorlessDRAM cell. In a capacitorless DRAM device, the memory information (i.e.,data that is stored in memory of the cells) is stored as charge in thefloating bodies 24 of the transistors, i.e., in the bodies 24 of cells50. The presence of the electrical charge in the floating body 24modulates the threshold voltage of the cell 50, which determines thestate of the cell 50. In one embodiment, the non-volatile memory isinitialized to have a low resistance state.

To perform a read operation on memory cell 50 according to oneembodiment of the present invention, a neutral or negative voltage isapplied to the substrate terminal 78, a substantially neutral voltage isapplied to SL terminal 72, a positive voltage is applied to BL terminal74, and a positive voltage more positive than the positive voltageapplied to BL terminal 74 is applied to WL terminal 70. If cell 50 is ina state “1” having holes in the body region 24, then a lower thresholdvoltage (gate voltage where the transistor is turned on) is observedcompared to the threshold voltage observed when cell 50 is in a state“0” having substantially no holes in body region 24. In one particularnon-limiting embodiment, about 0.0 volts is applied to terminal 72,about +0.4 volts is applied to terminal 74, about +1.2 volts is appliedto terminal 70, and about −2.0 volts is applied to terminal 78. However,these voltage levels may vary while maintaining the relativerelationships between the voltages applied, as described above.

Alternatively, a neutral or negative voltage is applied to the substrateterminal 78, a substantially neutral voltage is applied to SL terminal72, a positive voltage is applied to BL terminal 74, and a positivevoltage less positive than the positive voltage applied to BL terminal74 is applied to WL terminal 70. If cell 50 is in a state “1” havingholes in the body region 24, then the parasitic bipolar transistorformed by the SL terminal 72, floating body 24, and BL terminal 74 willbe turned on and a higher cell current is observed compared to when cell50 is in a state “0” having no holes in body region 24. In oneparticular non-limiting embodiment, about 0.0 volts is applied toterminal 72, about +3.0 volts is applied to terminal 74, about +0.5volts is applied to terminal 70, and about −2.0 volts is applied toterminal 78. However, these voltage levels may vary while maintainingthe relative relationships between the voltages applied, as describedabove.

A write state “1” operation can be carried out on cell 50 by performingband-to-band tunneling hot hole injection or impact ionization hot holeinjection. To write state “1” using band-to-band tunneling mechanism,the following voltages are applied to the terminals: a positive voltageis applied to BL terminal 74, a substantially neutral voltage is appliedto SL terminal 72, a negative voltage is applied to WL terminal 70, aneutral or negative voltage is applied to the substrate terminal 78.Under these conditions, holes are injected from BL terminal 74 into thefloating body region 24, leaving the body region 24 positively charged.In one particular non-limiting embodiment, a charge of about 0.0 voltsis applied to terminal 72, a potential of about +2.0 volts is applied toterminal 74, a potential of about −1.2 volts is applied to terminal 70,and about −2.0 volts is applied to terminal 78. However, these voltagelevels may vary while maintaining the relative relationships between thevoltages applied, as described above.

Alternatively, to write state “1” using an impact ionization mechanism,the following voltages are applied to the terminals: a positive voltageis applied to BL terminal 74, a substantially neutral voltage is appliedto SL terminal 72, a positive voltage is applied to WL terminal 70, anda neutral or negative voltage is applied to the substrate terminal 78.Under these conditions, holes are injected from the region 16 into thefloating body region 24, leaving the body region 24 positively charged.In one particular non-limiting embodiment, +0.0 volts is applied toterminal 72, a potential of about +2.0 volts is applied to terminal 74,a potential of about +0.5 volts is applied to terminal 70, and about−2.0 volts is applied to terminal 78. However, these voltage levels mayvary while maintaining the relative relationships between the voltagesapplied, as described above.

A write “0” operation of the cell 50 is now described. To write “0” tocell 50, a negative bias is applied to SL terminal 72 and/or BL terminal74, a neutral or negative voltage is applied to WL terminal 70, and aneutral or negative voltage is applied to substrate terminal 78. Underthese conditions, the p-n junction (junction between 24 and 16 andbetween 24 and 18) is forward-biased, evacuating any holes from thefloating body 24. In one particular non-limiting embodiment, about −1.0volts is applied to terminal 72, about −1.0 volts is applied to terminal70, and about 0.0 volts is applied to terminal 78. However, thesevoltage levels may vary, while maintaining the relative relationshipsbetween the voltages applied, as described above.

Alternatively, a write “0” operation can be performed to cell 50 byapplying a positive bias to WL terminal 70, and substantially neutralvoltages to SL terminal 72 and BL terminal 74, and a neutral or negativevoltage to substrate terminal 78. Under these conditions, the holes willbe removed from the floating body 24 through charge recombination. Inone particular non-limiting embodiment, about 1.0 volts is applied toterminal 70, about 0.0 volts are applied to terminals 72 and 74, andabout −2.0 volts is applied to terminal 78. However, these voltagelevels may vary, while maintaining the relative relationships betweenthe charges applied, as described above.

To perform a shadowing process, a positive voltage is applied toterminal 72 and a substantially neutral voltage is applied to terminal74. A neutral voltage or positive voltage is applied terminal 70 and aneutral or negative voltage is applied to terminal 78.

When the floating body has a positive potential, the bipolar transistorformed by the SL terminal 72, floating body 24, and BL terminal 74 willbe turned on. The positive voltage applied to terminal 72 is controlled(e.g., varied to maintain a constant current) such that the electricalcurrent flowing through the resistance change memory 40 is sufficient tochange the resistivity of the materials from a low resistivity state toa high resistivity state. Accordingly, the non-volatile resistancechange material will be in a high resistivity state when the volatilememory of cell 50 is in state “1” (i.e. floating body 24 is positivelycharged).

When the floating body is neutral or negatively charged, the bipolartransistor formed by the SL terminal 72, floating body 24, and BLterminal 74 will be turned off. Therefore, when voltages are applied asdescribed above, no electrical current will flow through the resistancechange memory 40 and it will retain its low resistivity state.Accordingly, the non-volatile resistance change material will be in alow resistivity state when the volatile memory of cell 50 is in state“0” (i.e. floating body is neutral or negatively charged).

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 74, about 700 μA is applied to terminal 72,about +1.0 volts is applied to terminal 70, and about −2.0 volts isapplied to terminal 78. However, these voltage levels may vary, whilemaintaining the relative relationships between the charges applied, asdescribed above. To change the non-volatile phase change memory from lowresistivity state to high resistivity state, a current level between 600μA and 1 mA can be used. The current level is expected to decrease asthe phase change material is scaled to smaller geometry.

Note that this process occurs non-algorithmically, as the state of thefloating body 24 does not have to be read, interpreted, or otherwisemeasured to determine what state to write the non-volatile resistancechange memory 40 to. Rather, the shadowing process occurs automatically,driven by electrical potential differences. Accordingly, this process isorders of magnitude faster than one that requires algorithmicintervention.

When power is restored to cell 50, the state of the cell 50 as stored onthe non-volatile resistance change memory 40 is restored into floatingbody region 24. In one embodiment, to perform the restore operation, anegative voltage is applied to terminal 70, a positive voltage isapplied to terminal 74, a negative voltage is applied to terminal 72,and a neutral or negative voltage is applied to terminal 78.

If the resistance change memory 40 is in high resistivity state, thiscondition will result in holes injection into the floating body 24,generated through the band-to-band tunneling mechanism, therebyrestoring the state “1” that the memory cell 50 held prior to theshadowing operation.

If the resistance change memory 40 is in low resistivity state, thenegative voltage applied to terminal 72 will evacuate holes injectedinto the floating body 24 because the p-n junction formed by thefloating body 24 and the region 16 is forward-biased. Consequently, thevolatile memory state of memory cell 50 will be restored to state “0”upon completion of the restore operation, restoring the state that thememory cell 50 held prior to the shadowing operation.

In one particular non-limiting example of this embodiment, about −1.0volts is applied to terminal 72, about +2.0 volts is applied to terminal74, about −1.2 volts is applied to terminal 70, and about −2.0 volts isapplied to terminal 78. However, these voltage levels may vary, whilemaintaining the relative relationships between the charges applied, asdescribed above.

Note that this process occurs non-algorithmically, as the state of thenon-volatile resistance change memory 40 does not have to be read,interpreted, or otherwise measured to determine what state to restorethe floating body 24 to. Rather, the restoration process occursautomatically, driven by resistivity state differences. Accordingly,this process is orders of magnitude faster than one that requiresalgorithmic intervention.

After restoring the memory cell(s) 50, the resistance change memory 40is/are reset to a predetermined state, e.g., a low resistivity state, sothat each resistance change memory 40 has a known state prior toperforming another shadowing operation.

To perform a reset operation according to the present embodiment, aneutral voltage or positive voltage is applied to terminal 70, asubstantially neutral voltage is applied to BL terminal 74, a positivevoltage is applied to SL terminal 72, and a neutral or negative voltageis applied to terminal 78.

When the floating body has a positive potential, the bipolar transistorformed by the SL terminal 72, floating body 24, and BL terminal 74 willbe turned on. The positive voltage applied to terminal 72 is optimizedsuch that the electrical current flowing through the resistance changememory 40 is sufficient to change the resistivity of the materials froma high resistivity state to a low resistivity state. Accordingly, allthe non-volatile resistance change memory 40 will be in a lowresistivity state upon completion of the reset operation.

In one particular non-limiting example of this embodiment, about 0.0volts is applied to terminal 74, about 400 μA is applied to terminal 72,about −1.0 volts is applied to terminal 70, and about −2.0 volts isapplied to terminal 78. However, these voltage levels may vary, whilemaintaining the relative relationships between the charges applied, asdescribed above. The current level required to change phase changememory materials to low resistivity state typically range between 100 μAto 600 μA. The current level requirement is expected to decrease as thephase change memory dimension is reduced.

FIG. 11 illustrates an alternative embodiment of a memory cell 50according to the present invention. In this embodiment, cell 50 has afin structure 52 fabricated on a silicon-on-insulator (SOI) substrate12, so as to extend from the surface of the substrate to form athree-dimensional structure, with fin 52 extending substantiallyperpendicularly to, and above the top surface of the substrate 12. Finstructure 52 is conductive and is built on buried insulator layer 22,which may be buried oxide (BOX). Insulator layer 22 insulates thefloating substrate region 24, which has a first conductivity type, fromthe bulk substrate 12. Fin structure 52 includes first and secondregions 16, 18 having a second conductivity type. Thus, the floatingbody region 24 is bounded by the top surface of the fin 52, the firstand second regions 16, 18 and the buried insulator layer 22. Fin 52 istypically made of silicon, but may comprise germanium, silicongermanium, gallium arsenide, carbon nanotubes, or other semiconductormaterials known in the art.

Device 50 further includes gates 60 on three sides of the floatingsubstrate region 24, as shown in FIG. 11. Alternatively, gates 60 canenclose two opposite sides of the floating substrate region 24. Gates 60are insulated from floating body 24 by insulating layers 62. Gates 60are positioned between the first and second regions 16, 18, adjacent tothe floating body 24.

A resistance change memory element 40 is positioned above the regionhaving second conductivity type. The resistance change memory element 40is shown as a variable resistor, and may be formed from phase changematerial or metal-insulator-metal systems, for example. In oneembodiment, the non-volatile memory is initialized to have a lowresistance state. In another alternate embodiment, the non-volatilememory is initialized to have a high resistance state.

Cell 50 includes several terminals: word line (WL) terminal 70, sourceline (SL) terminal 72, bit line (BL) terminal 74, and substrate terminal78. Terminal 70 is connected to the gate 60. Terminal 74 is connected tofirst region 16 and terminal 72 is connected to resistance change memoryelement 40 which is connected to second region 18. Alternatively,terminal 74 can be connected to resistance change memory element 40 andterminal 72 can be connected to first region 16. The bulk substrate 12is connected to terminal 78.

Cell 50 includes four terminals: word line (WL) terminal 70, source line(SL) terminal 72, bit line (BL) terminal 74 and substrate terminal 78.Gate 60 is connected to terminal 70, first and second regions 16, 18 areconnected to terminals 74 and 72, respectively, or vice versa, and thebulk substrate 12 is connected to terminal 78.

The operations of the embodiment of memory cell 50 shown in FIG. 11 arethe same as for memory cell 50 described in FIG. 10. Equivalentterminals have been assigned with the same numbering labels in bothfigures.

Up until this point, the description of cells 50 have been in regard tobinary cells, in which the data memories, both volatile andnon-volatile, are binary, meaning that they either store state “1” orstate “0”. However, in an alternative embodiment, the memory cellsdescribed herein can be configured to function as multi-level cells, sothat more than one bit of data can be stored in each cell 50. FIG. 12illustrates an example of voltage states of a multi-level cell whereintwo bits of data can be stored in each cell 50. In this case, a voltageless than or equal to a first predetermined voltage and greater than asecond predetermined voltage that is less than the first predeterminedvoltage in floating body or base region 24 volts is interpreted as state“01”, a voltage less than or equal to the second predetermined voltageis interpreted as state “00”, a voltage greater than the firstpredetermined voltage and less than or equal to a third predeterminedvoltage that is greater than the first predetermined voltage isinterpreted to be state “10” and a voltage greater than the thirdpredetermined voltage is interpreted as state “11”.

During the shadowing operation, the potential of the floating body orbase region 24 in turn determines the amount of current flowing throughthe resistance change memory 40, which will in turn determine the stateof the resistance change memory. The resistivity state of the resistancechange memory 40 can then be configured to store multi-level bits.

During restore operation, the resistivity state of the resistance changememory 40 will subsequently determine the voltage state of the floatingbody or base region 24.

FIG. 13A shows an example of array architecture 80 of a plurality ofmemory cells 50 arranged in a plurality of rows and columns according toan embodiment of the present invention. The memory cells 50 areconnected such that within each row, all of the gates 60 are connectedby a common word line terminal 70. The first regions 18 are connected toresistance change materials 40. Within the same row, they are thenconnected by a common source line 72. Within each column, the secondregions 16 are connected to a common bit line terminal 74. Within eachrow, all of the buried layers 22 are connected by a common buried wellterminal 76. Likewise, within each row, all of the substrates 12 areconnected by a common substrate terminal 78.

FIG. 13B shows an example of array architecture 80 of a plurality ofmemory cells 50 fabricated on a silicon-on-insulator (SOI) substrate,arranged in a plurality of rows and columns according to an embodimentof the present invention. The memory cells 50 are connected such thatwithin each row, all of the gates 60 are connected by a common word lineterminal 70. The first regions 18 are connected to resistance changematerials 40. Within the same row, they are then connected by a commonsource line 72. Within each column, the second regions 16 are connectedto a common bit line terminal 74. Likewise, within each row, all of thesubstrates 12 are connected by a common substrate terminal 78.

While the present invention has been described with reference to thespecific embodiments thereof, it should be understood by those skilledin the art that various changes may be made and equivalents may besubstituted without departing from the true spirit and scope of theinvention. In addition, many modifications may be made to adapt aparticular situation, material, composition of matter, process, processstep or steps, to the objective, spirit and scope of the presentinvention. All such modifications are intended to be within the scope ofthe claims appended hereto.

1-37. (canceled)
 38. A semiconductor memory cell comprising: a siliconcontrolled rectifier device comprising a floating body having a firstconductivity type selected from n-type conductivity type and p-typeconductivity type and configured to store data when power is applied tosaid cell; a nonvolatile memory comprising a resistance change elementconfigured to store data stored in said silicon controlled rectifierdevice upon transfer thereto; a buried layer region having a secondconductivity type selected from said n-type conductivity type and saidp-type conductivity type and being different from said firstconductivity type.
 39. The semiconductor memory cell of claim 38,wherein said resistance change element comprises a phase changematerial.
 40. The semiconductor memory cell of claim 38, wherein saidresistance change element comprises a metal-oxide-metal system.
 41. Thesemiconductor memory cell of claim 38, wherein said silicon controlledrectifier device comprises a substrate region having said firstconductivity type.
 42. The semiconductor memory cell of claim 41,wherein said substrate region is connected to an anode terminal.
 43. Thesemiconductor memory cell of claim 38, wherein said nonvolatile memorystores said data stored in said silicon controlled rectifier device uponloss of power to said cell, wherein said cell is configured to perform ashadowing process wherein said data in said silicon controlled rectifierdevice is loaded into and stored in said nonvolatile memory.
 44. Thesemiconductor memory cell of claim 38, arranged in a semiconductormemory array comprising a plurality of said semiconductor memory cellsarranged in a matrix of at least one row and a plurality of columns orat least one column and a plurality of rows.
 45. The semiconductormemory cell of claim 38, wherein said silicon controlled rectifierdevice is formed in a fin.
 46. The semiconductor cell of claim 38,wherein said resistance change element comprises a bottom electrode, aresistance change material and a top electrode.
 47. A semiconductormemory cell comprising: a transistor comprising a source region, a firstfloating body region, a drain region, and a gate; a silicon controlledrectifier device having a cathode region, a second floating body region,a buried layer region, and an anode region, wherein: a state of saidmemory cell is stored in said first floating body region, said firstfloating body region and said second floating body region are common,said silicon controlled rectifier device maintains a state of saidmemory cell, and said transistor is usable to access said memory cell;and a nonvolatile memory comprising a resistance change elementconfigured to store data stored in said first floating body region upontransfer thereto.
 48. The semiconductor memory cell of claim 47, whereinsaid resistance change element comprises a bottom electrode, aresistance change material and a top electrode.
 49. The semiconductormemory cell of claim 47, wherein said resistance change element iselectrically connected to one of said source region and said drainregion through a conductive element.
 50. The semiconductor memory cellof claim 47, wherein said resistance change element is connected to anaddress line.
 51. The semiconductor memory cell of claim 48, whereinsaid resistance change element is connected to an address line throughsaid top electrode.
 52. The semiconductor memory cell of claim 47,wherein said resistance change element comprises a phase changematerial.
 53. The semiconductor memory cell of claim 47, wherein saidresistance change element comprises a metal-oxide-metal system.
 54. Asemiconductor memory cell comprising: a silicon controlled rectifierdevice configured to store data when power is applied to said cell; anda nonvolatile memory comprising a resistance change element configuredto store data stored in said silicon controlled rectifier device upontransfer thereto under any one of a plurality of predeterminedconditions; wherein one of said predetermined conditions comprises lossof power to said cell, wherein said cell is configured to perform ashadowing process wherein said data in said silicon controlled rectifierdevice is loaded into and stored in said nonvolatile memory; wherein,upon restoration of power to said cell, said data in said nonvolatile isloaded into said silicon controlled rectifier device and stored therein;and wherein said cell is configured to reset said nonvolatile memory toan initial state after loading said data into said silicon controlledrectifier device upon said restoration of power.
 55. The semiconductormemory cell of claim 54, wherein another one of said predeterminedconditions comprises an instruction to back up said data stored in saidsilicon controlled rectifier device.
 56. The semiconductor memory cellof claim 54, wherein said resistance change element comprises a bottomelectrode, a resistance change material and a top electrode.
 57. Thesemiconductor memory cell of claim 54, wherein said resistance changeelement comprises a phase change material.
 58. The semiconductor memorycell of claim 54, wherein said resistance change element comprises ametal-oxide-metal system.